| PART |
Description |
Maker |
| 2N6439 |
60 W, 225 to 400 MHz CONTROLLED Q?BROADBAND RF POWER TRANSISTOR NPN SILICON
60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON
|
MOTOROLA[Motorola, Inc]
|
| M306N0FGTFP M306N0MCT |
60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON
60 W, 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON
60 W, 225 to 400 MHz CONTROLLED Q?BROADBAND RF POWER TRANSISTOR NPN SILICON
|
Tyco Electronics
|
| NST18-A |
Broadband Microwave Coaxial Noise Sources 10 MHz to 18 GHz
|
Micronetics, Inc.
|
| MASW-007588 MASW-007588-000SMB MASW-007588-TR3000 |
0 MHz - 6000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.2 dB INSERTION LOSS
GaAs Broadband SPDT Switch DC - 6.0 GHz
|
Tyco Electronics
|
| ADL5521-EVALZ |
400 MHz - 4 GHz Low Noise Amplifier
|
Analog Devices, Inc.
|
| VLFX-400 |
Low Pass Filter DC to 400 MHz (40 dB Isolation up to 20 GHz)
|
MINI[Mini-Circuits]
|
| BFS17P BFS18P. |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| CLY15 Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CLY10 Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SF0044BA01930S |
44.0 MHz Filter for Broadband Access Applications
SAW Filters for Broadband Cable and Cable Router
|
Integrated Circuit Systems
ICS
|
| UMIL60 |
60 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz
UHF 225-400 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 8; Gain (dB): 0; Vcc (V): 28; Cob (pF): 70; fO (MHz): 0; Case Style: 55HW-2 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Vishay Semiconductors
|
